IEEE NAP

Surface termination dependent topological states on InBi(001)

Maria Christine Richter^{1 *}, Maria Christine Richter^{1 *}, Olivier Heckmann¹, Jan Minar², Jean-Michel Mariot³, Johan Adell⁴, Mats Leandersson⁴, Janusz Sadowski⁵, Jurgen Braun⁶, Hubert Ebert⁶, Jonathan Denlinger⁷, Ivana Vobornik⁸, Jun Fujii⁹, Pavol Sutta¹⁰, Gavin Bell¹¹, Martin Gmitra¹², Karol Hricovini¹³

1) LPMS CY Cergy Paris Université (France)

2) New Technologies Research Centre, University of West Bohemia (Czech Republic)

3) Laboratoire de Chimie Physique{Matiere et Rayonnement, Sorbonne Universite (France)

4) MAX IV Laboratory, Lund University (Sweden)

5) Institute of Physics, Polish Academy of Sciences (Poland)

6) Department Chemie, Ludwig-Maximilians-Universitat Munchen (Germany)

7) Advanced Light Source, Lawrence Berkeley National Laboratory (United States)

8) TASC Laboratory, Istituto Ocina dei Materiali, CNR (Italy)

9) TASC Laboratory, Istituto Ocina dei Materiali (Italy)

10) Institute of Physics, Pavol Jozef Šafárik University in Košice (Slovakia)

11) Warwick University (United Kingdom)

12) Institute of Experimental Physics, Slovak Academy of Sciences (Slovakia)

13) LPMS CY Cergy Paris Université and LIDYL, Universite Paris-Saclay, CEA (France)

* Christine.Richter@cyu.fr

InBi is a non-symmorphic semimetal, lacking a mirror plane along the [001] axis, which exhibits a 1D nodal line in the vicinity of the X
point. Here we show how InBi(001) can be formed on a III-V semiconductor substrate by depositing Bi on to a In-rich InAs(111)A. ARPES
measurements reveal new topological electronic surface states, close to the M hight symmetry point. Theoretical calculations based on rela-
tivistic density functional theory with a one step-model photoemission model clarify the relationship between InBi(001) surface termination
and these surface states, supporting a predominant Bi bilayer termination. A tight-binding model based on the Bi bilayer with only Bi-Bi
hopping terms, and no Bi-In interaction, reproduces the calculated spin texture. Our study gives a consistent physical picture of the topological
surface electronic structure of InBi(001) based on an intact Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination.

Keywords:

ARPES, InBi, III-V compound, thin lms, topological surface states, Spin-orbit coupling, relativistic frame, chiral spin texture, dichroism