Deposition Of Amorphous Molybdenum Silicide (MoSi) Superconducting Thin Films viaMagnetron Co-Sputtering    

Luīze Dipāne1 *, Edgars Butanovs1, Martins Zubkins1, Gunta Kunakova2, Tom Yager1, Boris Polyakov1

1) Institute of Solid State Physics, University of Latvia (Latvia)

2) University of Latvia, Institute of Chemical Physics (Latvia)

* luize.dipane@cfi.lu.lv

In this work, growth of amorphous superconductive molybdenum silicide (MoSi) thin films on flat and nanostructured substrates was demonstrated. The deposition process involved direct-current (DC) magnetron co-sputtering from molybdenum and silicon targets in argon atmosphere. MoSi films were deposited on oxidized silicon wafers, and Ga2O3 and ZnS nanowires (NWs). Four-point Cr/Au (3/50 nm) electrical contacts were defined on the thin films and on individual Ga2O3-MoSi and ZnS-MoSi core-shell NWs using lithography for low-temperature measurements. The molybdenum-to-silicon ratio was optimized to achieve highest critical temperature (Tc) of 7.5 K in Mo0.77Si0.23. Development of novel superconductive nanostructured materials could enable novel applications in electronics and quantum technologies in future.


Keywords:

Molybdenum Silicide, Magnetron Sputtering, Superconductivity, Thin Films

Acknowledgements:

This research was funded by the Latvian Council of Science project "Raising critical temperature in MgB2-based superconductive nanowire systems via internal strain engineering" No. lzp-2022/1-0311.

Track: Nanomaterials Synthesis & Self-assembly (NSS)
Presentation type: Poster Presentation
Status: Accepted for presentation